Kingston HyperX 24GB (6x4GB) Memory Kit 1600MHz DDR3 Non-ECC CL9 240-pin DIMM with Intel XMP Support

£205.69 includes FREE UK Postage (other delivery options available)

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Kingston's KHX1600C9D3K6/24GX is a kit of six 512M x 64-bit 4GB (4096MB) DDR3-1600MHz CL9 SDRAM (Synchronous DRAM) memory modules, based on sixteen 256M x 8-bit DDR3 FBGA components per module. Each module kit supports Intel XMP (Extreme Memory Profiles). Total kit capacity is 24GB. Each module kit has been tested to run at DDR3-1600MHz at a low latency timing of 9-9-9-27 at 1.65V. The SPDs are programmed to JEDEC standard latency DDR3-1333MHz timing of 9-9-9 at 1.5V. Each 240-pin DIMM uses gold contact fingers and requires +1.5V.


DDR3 is the third generation of Double Data Rate (DDR) SDRAM memory. Similar to DDR2, it is a continuing evolution of DDR memory technology that delivers higher speeds (up to 1600 MHz), lower power consumption and heat dissipation. It is an ideal memory solution for bandwidth hungry systems equipped with dual and quad core processors and the lower power consumption is a perfect match for both server and mobile platforms. Dual In-line Memory Modules, or DIMMs, closely resemble SIMMs. Like SIMMs, most DIMMs install vertically into expansion sockets. The principal difference between the two is that on a SIMM, pins on opposite sides of the board are tied together to form one electrical contact; on a DIMM, opposing pins remain electrically isolated to form two separate contacts.


Lifetime warranty




Memory Size

24576MB (6 module(s) x 4096MB)

Memory Type


Memory Speed


Memory Package


Pin Configuration

240 pins

Bus I/O Configuration


Error Correction


CAS Latency


Connector Material


Module Configuration

512M x 64





  • JEDEC standard 1.5V ? 0.075V Power Supply
  • VDDQ = 1.5V ? 0.075V
  • 667MHz fCK for 1333Mb/sec/pin
  • 8 independent internal bank
  • Programmable CAS Latency: 5,6,7,8,9,10
  • Posted CAS
  • Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
  • Programmable CAS Write Latency(CWL) = 7(DDR3-1333)
  • 8-bit pre-fetch
  • Burst Length: 8 (Interleave without any limit, sequential with starting address ?000? only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
  • Bi-directional Differential Data Strobe
  • Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ? 1%)
  • On Die Termination using ODT pin
  • Average Refresh Period 7.8us at lower then TCASE 85?C, 3.9us at 85?C < TCASE . 95?C
  • Asynchronous Reset
  • PCB : Height 1.180' (30.00mm), double sided component

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Catalogue No: KHX1600C9D3K6_24GX