Kingston HyperX 8GB (2 x 4GB) Memory Module 1866MHz DDR3 Non-ECC CL9 240-pin Unbuffered DIMM XMP

£71.39 includes FREE UK Postage (other delivery options available)

Shipping Destinations for this item

UK - Shipping Included
United Kingdom
Europe Zone 1 - £2.19
Austria, Belgium, Denmark, France, Germany, Ireland, Luxembourg, Netherlands, Switzerland
Europe Zone 2 - £2.29
Andorra, Croatia, Czech Republic, Finland, Liechtenstein, Monaco, Norway, Poland, Sweden
Europe Zone 3 - £2.49
Bulgaria, Cyprus, Estonia, Faroe Islands, Gibraltar, Greece, Greenland, Hungary, Iceland, Italy, Latvia, Lithuania, Malta, Montenegro, Portugal, Romania, San Marino, Serbia, Slovakia, Slovenia, Spain, Vatican City
North America - £3.99
Canada, USA
Australia and Far East Asia - £3.99
Australia, Israel, New Zealand, Taiwan
Japan - £4.99
Japan
Others - £6.99
Falkland Islands

RRP £0.00

Sorry, this product is currently unavailable.

General

Marketing

Kingston's KHX1866C9D3K2/8GX is a kit of two 512M x 64-bit (4GB) DDR3-1866 CL9 SDRAM (Synchronous DRAM) 2Rx8 memory modules, based on sixteen 256M x 8-bit DDR3 FBGA components per module. Each module kit supports Intel XMP (Extreme Memory Profiles). Total kit capacity is 8GB. Each module kit has been tested to run at DDR3-1866 at a low latency timing of 9-11-9-27 at 1.65V. For additional supported timing parameters see the information below. The SPDs are programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9 at 1.5V. Each 240-pin DIMM uses gold contact fingers and requires +1.5V.

Warranty

Lifetime

Memory

Memory Size

8192MB (2 module(s) x 4096MB)

Memory Type

DDR3

Memory Speed

1866MHz

Memory Package

DIMM

Pin Configuration

240 pins

Bus I/O Configuration

Unbuffered

Error Correction

Non ECC

CAS Latency

CL9

Connector Material

Gold

Module Configuration

512M x 64

Electrical

Voltage

1.65V

Environmental

Operating Temperature

0 to 85?C

Non Operating Temperature

-55 to +100?C

Features

  • JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
  • VDDQ = 1.5V (1.425V ~ 1.575V)
  • 667MHz fCK for 1333Mb/sec/pin
  • 8 independent internal bank
  • Programmable CAS Latency: 9, 8, 7, 6
  • Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
  • Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
  • 8-bit pre-fetch
  • MRS]
  • Bi-directional Differential Data Strobe
  • Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ? 1%)
  • On Die Termination using ODT pin
  • Average Refresh Period 7.8us at lower than TCASE 85?C,
  • 3.9us at 85?C < TCASE < 95?C
  • Asynchronous Reset


For more information and our Delivery Policy see here.


For more information and our Returns Policy see here.

Catalogue No: EL-22200008